AUIRFR6215 mosfet equivalent, power mosfet.
* Advanced Planar Technology
* Low On-Resistance
* P-Channel
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* Fully Ava.
of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This b.
Specifically designed for Automotive applications of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that .
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