AUIRFZ24NS Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
AUIRFZ24NS Key Features
- Advanced Planar Technology
- Low On-Resistance
- Dynamic dV/dT and dI/dT capability
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS pliant
- Automotive Qualified
- Description Specifically designed for Automotive