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AUIRFZ24NS - Power MOSFET

Download the AUIRFZ24NS datasheet PDF. This datasheet also covers the AUIRFZ24NL variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

Key Features

  • l l l l l l l l l AUIRFZ24NS AUIRFZ24NL HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS 55V 0.07Ω 17A G S RDS(on) max. ID D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFZ24NL_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFZ24NS Power MOSFET Infineon
AUIRFZ24NL Power MOSFET Infineon
AUIRFZ44N Power MOSFET Infineon
AUIRFZ44VZS Power MOSFET Infineon
AUIRFZ44Z Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFZ24NL Power MOSFET
AUIRFZ44NL Power MOSFET
AUIRFZ44NS Power MOSFET
AUIRFZ44V Power MOSFET
AUIRFZ44VZS Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD - 96377 Features l l l l l l l l l AUIRFZ24NS AUIRFZ24NL HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 55V 0.07Ω 17A G S RDS(on) max. ID D Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.