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AUIRFZ24NS - Power MOSFET

Download the AUIRFZ24NS datasheet PDF. This datasheet also covers the AUIRFZ24NL variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Dynamic dV/dT and dI/dT capability.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFZ24NL-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFZ24NS Power MOSFET International Rectifier
AUIRFZ24NL Power MOSFET International Rectifier
AUIRFZ44NL Power MOSFET International Rectifier
AUIRFZ44NS Power MOSFET International Rectifier
AUIRFZ44V Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRFZ24NL Power MOSFET
AUIRFZ44N Power MOSFET
AUIRFZ44VZS Power MOSFET
AUIRFZ44Z Power MOSFET
AUIRFZ44ZS Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT and dI/dT capability  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .