Description
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.
Features
- l l l l l l l l l
AUIRFZ24NS AUIRFZ24NL
HEXFET® Power MOSFET
D
Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
- V(BR)DSS
55V 0.07Ω
17A
G S
RDS(on) max. ID
D.
AUIRFZ24NL Datasheet
