AUIRFZ24NL - Power MOSFET

Infineon

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

Advanced Planar Technology.
Low On-Resistance.
Dynamic dV/dT and dI/dT capability.
175°C Operating Temperature.
Fast Switching.
Fully Avalanche Rated.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.

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AUIRFZ24NL power mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	AUIRFZ24NL
Manufacturer	Infineon
File Size	624.90 KB
Description	Power MOSFET
Datasheet	AUIRFZ24NL Datasheet

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AUIRFZ24NS	Power MOSFET
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Full PDF Text Transcription (Reference)

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AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT and dI/dT capability  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .