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AUIRFZ24NL - Power MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Dynamic dV/dT and dI/dT capability.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

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Datasheet preview – AUIRFZ24NL

Datasheet Details

Part number AUIRFZ24NL
Manufacturer Infineon
File Size 624.90 KB
Description Power MOSFET
Datasheet download datasheet AUIRFZ24NL Datasheet
Additional preview pages of the AUIRFZ24NL datasheet.

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Full PDF Text Transcription

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AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT and dI/dT capability  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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