AUIRGP4062D Datasheet - Infineon

INSULATED GATE BIPOLAR TRANSISTOR

* Low VCE (on) Trench IGBT Technology

* Low Switching Losses

* 5µs SCSOA

* Square RBSOA

* 100% of The Parts Tested for ILM

* Positive VCE (on) Temperature Coefficient.

* Ultra Fast Soft Recovery Co-pak Diode

* Tighter Distribution of Parameters

* Lead-Free, RoHS

AUIRGP4062D

554.63 KB

Insulated gate bipolar transistor.

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