Part AUIRGP4062D
Description INSULATED GATE BIPOLAR TRANSISTOR
Category Transistor
Manufacturer Infineon
Size 554.63 KB
Infineon
AUIRGP4062D

Overview

  • Low VCE (on) Trench IGBT Technology
  • Low Switching Losses
  • 5µs SCSOA
  • Square RBSOA
  • 100% of The Parts Tested for ILM
  • Positive VCE (on) Temperature Coefficient.
  • Ultra Fast Soft Recovery Co-pak Diode
  • Tighter Distribution of Parameters
  • Lead-Free, RoHS Compliant
  • Automotive Qualified * C G E n-channel C VCES = 600V IC = 24A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V C Benefits