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AUIRGP4062D-E - INSULATED GATE BIPOLAR TRANSISTOR

Download the AUIRGP4062D-E datasheet PDF. This datasheet also covers the AUIRGP4062D variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE (on) Trench IGBT Technology.
  • Low Switching Losses.
  • 5µs SCSOA.
  • Square RBSOA.
  • 100% of The Parts Tested for ILM.
  • Positive VCE (on) Temperature Coefficient.
  • Ultra Fast Soft Recovery Co-pak Diode.
  • Tighter Distribution of Parameters.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • C G E n-channel C VCES = 600V IC = 24A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V C Benefits.
  • High Efficiency in a Wide Range of App.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRGP4062D-Infineon.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features  Low VCE (on) Trench IGBT Technology  Low Switching Losses  5µs SCSOA  Square RBSOA  100% of The Parts Tested for ILM  Positive VCE (on) Temperature Coefficient.  Ultra Fast Soft Recovery Co-pak Diode  Tighter Distribution of Parameters  Lead-Free, RoHS Compliant  Automotive Qualified * C G E n-channel C VCES = 600V IC = 24A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.