Datasheet4U Logo Datasheet4U.com

AUIRGPS4070D0 - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (on) Trench IGBT Technology.
  • Low Switching Losses.
  • 6µs SCSOA.
  • Square RBSOA.
  • 100% of the parts tested for ILM .
  • Positive VCE (on) Temperature Coefficient.
  • Soft Recovery Co-pak Diode.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  C G E n-channel VCES = 600V IC = 160A, TC = 100°C tsc 6µs, TJ(MAX) = 175°C VCE(on) typ. = 1.70V  C Benefits.
  • High Efficiency in a Wide Range of.

📥 Download Datasheet

Datasheet preview – AUIRGPS4070D0

Datasheet Details

Part number AUIRGPS4070D0
Manufacturer Infineon
File Size 866.87 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet AUIRGPS4070D0 Datasheet
Additional preview pages of the AUIRGPS4070D0 datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
  AUTOMOTIVE GRADE AUIRGPS4070D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features  Low VCE (on) Trench IGBT Technology  Low Switching Losses  6µs SCSOA  Square RBSOA  100% of the parts tested for ILM   Positive VCE (on) Temperature Coefficient  Soft Recovery Co-pak Diode  Lead-Free, RoHS Compliant  Automotive Qualified *  C G E n-channel VCES = 600V IC = 160A, TC = 100°C tsc 6µs, TJ(MAX) = 175°C VCE(on) typ. = 1.
Published: |