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Infineon Technologies Electronic Components Datasheet

BAS3005A-02V Datasheet

Low VF Schottky Diode

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Low VF Schottky Diode
Forward current: 0.5 A
Reverse voltage: 30 V
Very low forward voltage
(typ. 0.45 V @ IF = 0.5 A)
For low loss, fast-recovery protecting
and clamping applications
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BAS3005A...
BAS3005A-02V

Type
BAS3005A-02V
Package
SC79
Configuration
single
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage1)
VR
Forward current1), TS 126 °C, BAS3005A-02V IF
Average rectified forward current (50/60Hz, sinus) IFAV
Repetitive peak forward current
(tp 1 ms, D 0.25), BAS3005A-02V
I FRM
Non-repetitive peak surge forward current
(t 10 ms), BAS3005A-02V
I FSM
Junction temperature
Tj
Operating temperature range
Top
Storage temperature
Tstg
1For TA > 25 °C the derating of VR and IF has to be considered.
Marking
2
Value
Unit
30
V
500
mA
500
3.5
A
5
150
°C
-55 ...125
-65 ...150
1
2008-02-11


Infineon Technologies Electronic Components Datasheet

BAS3005A-02V Datasheet

Low VF Schottky Diode

No Preview Available !

BAS3005A...
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
Unit
80
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current2)
IR
VR = 5 V
-
-
15
VR = 10 V
-
-
30
VR = 30 V
-
- 300
Forward voltage2)
VF
IF = 1 mA
- 200 260
IF = 10 mA
- 260 310
IF = 100 mA
- 340 390
IF = 200 mA
- 370 420
IF = 500 mA
- 450 500
Unit
µA
mV
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Diode capacitance
CT
-
10 15
VR = 5 V, f = 1 MHz
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulsed test: tp = 300 µs; D = 0.01
Unit
pF
2
2008-02-11


Part Number BAS3005A-02V
Description Low VF Schottky Diode
Maker Infineon
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BAS3005A-02V Datasheet PDF






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