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Infineon Technologies Electronic Components Datasheet

BAS3005B-02V Datasheet

Medium Power AF Schottky Diode

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Medium Power AF Schottky Diode
Forward current: 0.5 A
Reverse voltage: 30 V
Low capacitance, low reverse current
For high efficiency DC/DC conversion,
fast switching, protecting and
clamping applications
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BAS3005B-02LRH*
BAS3005B-02V

BAS3005B....
Type
BAS3005B-02LRH*
BAS3005B-02V
*Preliminary
Package
TSLP-2-17
SC79
Configuration
single, leadless
single
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage1)
VR
RMS reverse voltage
Forward current1)
VR(RMS)
IF
Average rectified forward current (50/60Hz, sinus) IFAV
Repetitive peak forward current
(tp 1 ms, D 0.25)
IFRM
Non-repetitive peak surge forward current
(t 10ms)
IFSM
Junction temperature
Tj
Operating temperature range
Top
Storage temperature
Tstg
1
Marking
5B
3
Value
Unit
30
V
-
500
mA
500
3.5
A
5
150
-55 ...125
-65 ...150
°C
2012-07-02


Infineon Technologies Electronic Components Datasheet

BAS3005B-02V Datasheet

Medium Power AF Schottky Diode

No Preview Available !

BAS3005B....
1For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves.
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
80
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current1)
IR
µA
VR = 5 V
-
1
5
VR = 10 V
-
2
10
VR = 30 V
-
5
25
Forward voltage1)
VF
mV
IF = 1 mA
- 200 250
IF = 10 mA
- 260 310
IF = 100 mA
- 360 410
IF = 200 mA
- 410 470
IF = 500 mA
- 550 620
AC Characteristics
Diode capacitance
VR = 5 V, f = 1 MHz
1Pulsed test: tp = 300 µs; D = 0.01
CT
-
6
10 pF
2
2012-07-02


Part Number BAS3005B-02V
Description Medium Power AF Schottky Diode
Maker Infineon
PDF Download

BAS3005B-02V Datasheet PDF






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