BFR750L3RH - Linear Low Noise SiGe:C Bipolar RF Transistor

Datasheet Details

Part number	BFR750L3RH
Manufacturer	Infineon
File Size	592.18 KB
Description	Linear Low Noise SiGe:C Bipolar RF Transistor
Datasheet	BFR750L3RH Datasheet

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Full PDF Text Transcription

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Linear Low Noise SiGe:C Bipolar RF Transistor • High gain ultra low noise RF transistor • Based on Infineon's reliable high volume Silicon Germanium technology • Provides outstanding performance for a wide range of wireless applications up to 10 GHz • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages • High maximum stable and available gain Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz • Pb-free (RoHS compliant) and halogen-free very thin small leadless package (package height 0.32 mm max.

Published: Feb 11, 2016 |