BGA5M1BN6 Description
BGA5M1BN6 BGA5M1BN6 18dB High Gain Low Noise Amplifier for LTE Midband.
BGA5M1BN6 Key Features
- Operating frequencies: 1805
- 2200 MHz
- Insertion power gain: 19.3 dB
- Insertion Loss in bypass mode: 4.7 dB
- Low noise figure: 0.65 dB
- Low current consumption: 9.5 mA
- Multi-state control: Bypass- and high gain-Mode
- Ultra small TSNP-6-10 leadless package
- RF output internally matched to 50 Ohm
- Low external ponent count