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BGA5M1BN6 Datasheet 18dB High Gain Low Noise Amplifier

Manufacturer: Infineon

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BGA5M1BN6 18db high gain low noise amplifier by Infineon - Datasheet Preview

Datasheet Details

Part number	BGA5M1BN6
Manufacturer	Infineon
File Size	287.53 KB
Description	18dB High Gain Low Noise Amplifier
Download	BGA5M1BN6 Download (PDF)

Overview

BGA5M1BN6 BGA5M1BN6 18dB High Gain Low Noise Amplifier for LTE.

Key Features

Operating frequencies: 1805 - 2200 MHz.
Insertion power gain: 19.3 dB.
Insertion Loss in bypass mode: 4.7 dB.
Low noise figure: 0.65 dB.
Low current consumption: 9.5 mA.
Multi-state control: Bypass- and high gain-Mode.
Ultra small TSNP-6-10 leadless package.
RF output internally matched to 50 Ohm.
Low external component count 0.7 x 1.1 mm2.

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