BSB017N03LX3G Datasheet | Infineon

n-Channel Power MOSFET Opti MOS™ BSB017N03LX3 Data Sheet 2.2, 2011-05-27 Final Industrial & Multimarket Opti MOS™ Power-MOSFET BSB017N03LX3 G Description Opti MOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make Opti MOS™ 30V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Data and Tele applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Opti MOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. Opti MOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in puting applications Features - Optimized for high switching frequency DC/DC converter - 100% avalanche tested - Very low on-resistance RDS(on) - Excellent gate charge x RDS(on) product (FOM) - Qualified according to JEDEC1) for target applications - Pb-free plating; Ro HS pliant - Halogen-free according to IEC61249-2-21 - Double.sided cooling - Low parasitic inductance - patible with Direct FET® package MX footprint and outline - 100% Rg Tested - Low profile (<0.7 mm) Applications - On board power for server - Power managment for high performance puting - Synchronous rectification - High power density point of load converters Table 1 Key Performance Parameters Parameter Value Unit...