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Infineon Technologies Electronic Components Datasheet

BSC059N04LSG Datasheet

Power-Transistor

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OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC059N04LS G
Product Summary
VDS
RDS(on),max
ID
40 V
5.9 mW
73 A
PG-TDSON-8
Type
BSC059N04LS G
Package
PG-TDSON-8
Marking
059N04LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
I D,pulse
I AS
E AS
V GS
T C=25 °C
T C=25 °C
I D=50 A, R GS=25 W
Value
73
46
62
39
16
292
50
25
±20
Unit
A
mJ
V
Rev. 2.1
page 1
2013-05-17


Infineon Technologies Electronic Components Datasheet

BSC059N04LSG Datasheet

Power-Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC059N04LS G
Value
50
2.5
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Device on PCB
R thJA
bottom
top
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
- - 2.5 K/W
20
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=23 µA
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
40
1.2
-
-
-
0.1
-V
2
1 µA
V DS=40 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=40 A
-
6.8 8.5 mW
V GS=10 V, I D=50 A
- 4.9 5.9
Gate resistance
RG
- 1.4 - W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
48
96
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.1
page 2
2013-05-17


Part Number BSC059N04LSG
Description Power-Transistor
Maker Infineon
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