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BSC098N10NS5 - MOSFET

General Description

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Key Features

  • Optimized for high performance SMPS, e. g. sync. rec.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription for BSC098N10NS5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BSC098N10NS5. For precise diagrams, and layout, please refer to the original PDF.

BSC098N10NS5 MOSFET OptiMOSTM5Power-Transistor,100V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistan...

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S,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 9.8 mΩ ID 60 A Qoss 30 nC QG(0V..10V) 22 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC098N10NS5 Package PG-TDSON-8 Marking 098N10NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.2,2020-02-07 OptiMOSTM5Power-Transistor,100V BSC098N10NS5 TableofContents Descrip

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