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Infineon Technologies Electronic Components Datasheet

BSC100N10NSFG Datasheet

Power-Transistor

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OptiMOS™2 Power-Transistor
Features
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSC100N10NSF G
Product Summary
V DS
R DS(on),max
ID
100 V
10 m
90 A
PG-TDSON-8
Type
BSC100N10NSF G
Package
PG-TDSON-8
Marking
100N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=50 K/W2)
Pulsed drain current3)
Avalanche energy, single pulse
Gate source voltage
I D,pulse
E AS
V GS
T C=25 °C
I D=50 A, R GS=25
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
90
57
11.4
360
377
±20
156
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.08
page 1
2009-11-03


Infineon Technologies Electronic Components Datasheet

BSC100N10NSFG Datasheet

Power-Transistor

No Preview Available !

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance,
junction - ambient
R thJA
bottom
top
minimal footprint
6 cm2 cooling area2)
BSC100N10NSF G
min.
Values
typ.
Unit
max.
- - 0.8 K/W
- - 18
- - 62
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=110 µA
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
V DS=100 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=25 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
100
2
-
-
-
-
-
31
-
3
0.01
10
1
7.7
1.3
61
-V
4
1 µA
100
100 nA
10 m
-
-S
1)J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) see figure 3
Rev. 2.08
page 2
2009-11-03


Part Number BSC100N10NSFG
Description Power-Transistor
Maker Infineon
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BSC100N10NSFG Datasheet PDF






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