OptiMOS™2 Power-Transistor
Features
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSC100N10NSF G
Product Summary
V DS
R DS(on),max
ID
100 V
10 mΩ
90 A
PG-TDSON-8
Type
BSC100N10NSF G
Package
PG-TDSON-8
Marking
100N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=50 K/W2)
Pulsed drain current3)
Avalanche energy, single pulse
Gate source voltage
I D,pulse
E AS
V GS
T C=25 °C
I D=50 A, R GS=25 Ω
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
90
57
11.4
360
377
±20
156
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.08
page 1
2009-11-03
