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BSC160N15NS5 - MOSFET

Description

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Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • Very low reverse recovery charge (Qrr).
  • 150 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number BSC160N15NS5
Manufacturer Infineon
File Size 0.96 MB
Description MOSFET
Datasheet download datasheet BSC160N15NS5 Datasheet
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BSC160N15NS5 MOSFET OptiMOSTM5Power-Transistor,150V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Verylowreverserecoverycharge(Qrr) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max 16 mΩ ID 56 A Qrr 26 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC160N15NS5 Package PG-TDSON-8 Marking 160N15NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.
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