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Type
OptiMOSTM3 Power-Transistor
Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21
BSC16DN25NS3 G
Product Summary VDS RDS(on),max ID
250 V 165 mW 10.9 A
PG-TDSON-8
Type BSC16DN25NS3 G
Package PG-TDSON-8
Marking 16DN25NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current2)
I D,pulse
T C=100 °C T C=25 °C
Avalanche energy, single pulse Reverse diode dv /dt
E AS dv /dt
I D=5.
BSC16DN25NS3G Datasheet
