Datasheet Summary
MOSFET
OptiMOSTM5Power-Transistor,150V
Features
- N-channel,normallevel
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- Verylowreverserecoverycharge(Qrr)
- 150°Coperatingtemperature
- Pb-freeleadplating;RoHSpliant
- QualifiedaccordingtoJEDEC1)fortargetapplication
- Idealforhigh-frequencyswitchingandsynchronousrectification
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 150 V
RDS(on),max
16 mΩ
ID 56 A
Qrr 26 nC
SuperSO8
8 7 65
56 78
1 23 4
S1 8D S2 7D S3 6D G4 5D
Type/OrderingCode BSC160N15NS5
Package PG-TDSON-8
Marking 160N15NS
RelatedLinks
- 1) J-STD20 and...