Datasheet Summary
BSC500N20NS3G
MOSFET
OptiMOSTM3Power-Transistor,200V
Features
- N-channel,normallevel
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- Pb-freeleadplating;RoHSpliant
- QualifiedaccordingtoJEDEC1)fortargetapplication
- Halogen-freeaccordingtoIEC61249-2-21
- Idealforhigh-frequencyswitchingandsynchronousrectification
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
50 mΩ
PG-TDSON-8
8 7 6 5
5 6 7 8
Pin 1
2 3
4 3
2 1
Drain Pin 5-8
Gate
- 1
Pin 4
Source
- 1: Internal body diode Pin...