Datasheet Summary
BSZ340N08NS3 G
OptiMOSTM3 Power-Transistor
Features
- Ideal for high frequency switching
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21 Type BSZ340N08NS3 G
Product Summary V DS R DS(on),max ID 80 34 23 V mΩ A
Package Marking
PG-TSDSON-8 340N08N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=60 K/W 2) Pulsed drain current3)...