BSZ900N20NS3G Description
Type OptiMOSTM3 Power-Transistor.
BSZ900N20NS3G Key Features
- Optimized for dc-dc conversion
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Low on-resistance R DS(on)
- 150 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
- case R thJC
- ambient