| Part number | CFY25-P |
|---|---|
| Download | CFY25-P Datasheet (PDF) |
| File Size | 46.87 KB |
| Manufacturer | Infineon |
| Description | HiRel X-Band GaAs MOSFET |
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| Manufacturer | Part Number | Description |
|---|---|---|
Siemens Semiconductor Group |
CFY25-17 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
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Siemens Semiconductor Group |
CFY25-20 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
Siemens Semiconductor Group |
CFY25-23 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
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Siemens Semiconductor Group |
CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
HiRel X-Band GaAs General Purpose MESFET HiRel discrete and Microwave semiconductor For professional pre- and driver- amplifiers For frequencies from 500MHz to 20GHz Hermetically sealed microwave package Low noise figure, high gain, moderate power ESA Space Qualification Expected 1998 ESA/SCC Detail Spec. 5613/008 Type Variante No.s 01 to 05 ESD (Electrostatic discharge) sensitive device, observe handling...
