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ESD3V3XU1BL - TVS Diode

Description

P G-TS LP-2_Dual_Diode_S erie_P inConf_and_S chematicDiag.

Features

  • ESD / transient protection of high speed data lines exceeding.
  • IEC61000-4-2 (ESD): ±20 kV (air / contact).
  • IEC61000-4-4 (EFT): ±2.5 kV / ±50 A (5/50 ns).
  • IEC61000-4-5 (surge): ±3 A (8/20 μs).
  • Maximum working voltage: VRWM = ±3.6 V.
  • Ultra low capacitance CL = 0.20 pF (typical) at f = 1 GHz.
  • Very low clamping voltage: VCL = 14 V at ITLP = 16 A (typical) according to TLP [1].
  • Very low dynamic resistance: RDYN = 0.45 Ω (typical.

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Full PDF Text Transcription

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TVS Diode Transient Voltage Suppressor Diodes ESD3V3XU1BL Bi-directional Ultra Low Capacitance ESD / Transient Protection Diode ESD3V3XU1BL Data Sheet Revision 1.3, 2013-09-11 Final Power Management & Multimarket Edition 2013-09-11 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
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