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FF1000R17IE4DP_B2 Datasheet IGBT

Manufacturer: Infineon

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Overview

TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FF1000R17IE4DP_B2 PrimePACK™3ModulmitTrench/FeldstoppIGBT4undEmitterControlledDiode.

Key Features

  • High short-circuit capability.
  • High surge current capability.
  • High current density.
  • Low switching losses.
  • Tvj op = 150°C.
  • VCEsat with positive temperature coefficient.
  • Enlarged diode for regenerative operation Mechanical Features.
  • 4 kV AC 1min insulation.
  • Package with CTI > 400.
  • High creepage and clearance distances.
  • High power and thermal cycling capability.
  • Integrated NTC temperature s.

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