* High short-circuit capability
* High surge current capability
* High current density
* Low switching losses
* Tvj op = 150°C
* VCEsat with positive temperature coefficient
* Enlarged diode for regenerative operation Mechanical Features
FF1000R17IE4DP_B2 Datasheet (620.20 KB)
FF1000R17IE4DP_B2
620.20 KB
Igbt.
Technische Information / Technical Information IGBT-Modul IGBT-Module FF1000R17IE4DP_B2 PrimePACK™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Co.
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