FF1000R17IE4DP_B2 Description
TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FF1000R17IE4DP_B2 PrimePACK™3ModulmitTrench/FeldstoppIGBT4undEmitterControlledDiode PrimePACK™3modulewithTrench/FieldstopIGBT4andEmitterControlleddiode TypischeAnwendungen.
FF1000R17IE4DP_B2 Key Features
- Highshort-circuitcapability
- Highsurgecurrentcapability
- Highcurrentdensity
- Lowswitchinglosses
- Tvjop=150°C
- VCEsatwithpositivetemperaturecoefficient
- Enlargeddiodeforregenerativeoperation
- 4kVAC1mininsulation
- PackagewithCTI>400
- Highcreepageandclearancedistances