900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

FP75R12KT4_B11 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FP75R12KT4_B11
EconoPIM™3ModulmitschnellemTrench/FeldstoppIGBT4undEmitterControlled4DiodeundNTC
EconoPIM™3modulewithfastTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC
VCES = 1200V
IC nom = 75A / ICRM = 150A
TypischeAnwendungen
• Hilfsumrichter
• Motorantriebe
• Servoumrichter
ElektrischeEigenschaften
• NiedrigeSchaltverluste
• Tvjop=150°C
• VCEsatmitpositivemTemperaturkoeffizienten
• NiedrigesVCEsat
MechanischeEigenschaften
• HoheLast-undthermischeWechselfestigkeit
• IntegrierterNTCTemperaturSensor
• Kupferbodenplatte
• PressFITVerbindungstechnik
• Standardgehäuse
TypicalApplications
• AuxiliaryInverters
• MotorDrives
• ServoDrives
ElectricalFeatures
• LowSwitchingLosses
• Tvjop=150°C
• VCEsatwithpositiveTemperatureCoefficient
• LowVCEsat
MechanicalFeatures
• HighPowerandThermalCyclingCapability
• IntegratedNTCtemperaturesensor
• CopperBasePlate
• PressFITContactTechnology
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:AS
approvedby:RS
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
dateofpublication:2013-10-29
revision:3.0
ULapproved(E83335)
1


Infineon Technologies Electronic Components Datasheet

FP75R12KT4_B11 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FP75R12KT4_B11
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 95°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VCES 
IC nom 
ICRM 
Ptot 
VGES 
1200
75
150
385
+/-20
V
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 2,40 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGon = 1,1
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGon = 1,1
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,1
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,1
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 75 A, VCE = 600 V, LS = 40 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 2500 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,1
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 75 A, VCE = 600 V, LS = 40 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3600 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 1,1
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
1,85 2,15
2,15
2,25
V
V
V
5,2 5,8 6,4 V
 0,57  µC
 10 
 4,30  nF
 0,16  nF
  1,0 mA
  100 nA
0,16
 0,17 
0,17
µs
µs
µs
0,03
 0,04 
0,04
µs
µs
µs
0,34
 0,43 
0,45
µs
µs
µs
0,08
 0,15 
0,17
µs
µs
µs
3,10 mJ
 6,60  mJ
7,65 mJ
4,20 mJ
 6,40  mJ
7,20 mJ
 270 
A
  0,39 K/W
 0,13
K/W
-40  150 °C
preparedby:AS
approvedby:RS
dateofpublication:2013-10-29
revision:3.0
2


Part Number FP75R12KT4_B11
Description IGBT-Module
Maker Infineon
Total Page 12 Pages
PDF Download

FP75R12KT4_B11 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FP75R12KT4_B11 IGBT-Module
Infineon
2 FP75R12KT4_B15 IGBT-Module
Infineon





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy