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FZ1200R45KL3_B5 - IGBT

Key Features

  • High DC stability.
  • High dynamic robustness.
  • High short-circuit capability.
  • Low VCEsat.
  • Trench IGBT 3.
  • VCEsat with positive temperature coefficient Mechanical Features.
  • AlSiC base plate for increased thermal cycling capability.
  • Package with CTI > 600.
  • Package with enhanced insulation of 10.4kV AC 10s.
  • High creepage and clearance distances.
  • Isolated base plate Module Label Code Barcode Code 128 DM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FZ1200R45KL3_B5 hochisolierendesModulmitTrench/FeldstoppIGBT3undEmitterControlled3Diode highlyinsulatedmodulewithTrench/FieldstopIGBT3andEmitterControlled3diode PotentielleAnwendungen • Hochleistungsumrichter • Mittelspannungsantriebe • Motorantriebe • Multi-LevelUmrichter • Traktionsumrichter ElektrischeEigenschaften • GroßeDC-Festigkeit • HohedynamischeRobustheit • HoheKurzschlussrobustheit • NiedrigesVCEsat • TrenchIGBT3 • VCEsatmitpositivemTemperaturkoeffizienten MechanischeEigenschaften • AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit • GehäusemitCTI>600 • Gehäuse mit erweiterten Isolationseigenschaftenvon10,4kVAC10s • GroßeLuft-undKriechstrecken • IsolierteBodenplatte VCES = 4500V IC nom = 1200A / ICRM = 2400A Potential