GTVA220701FA Datasheet Thermally-Enhanced High Power RF GaN HEMT

Manufacturer: Infineon

Datasheet Details

Part number	GTVA220701FA
Manufacturer	Infineon
File Size	119.48 KB
Description	Thermally-Enhanced High Power RF GaN HEMT
Download	GTVA220701FA Download (PDF)

The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

advance specification GTVA220701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 70 W, 50 V, 1805 – 2170.

input matching, high efficiency, and a thermally-enhanced package with earless flange. Features.
Input matched.
Typical Pulsed CW performance, 2170 MHz, 48 V - Output power at P3dB = 70 W - Efficiency = 70% - Gain = 20 dB.
Capable of handling 10:1 VSWR @48 V, 70 W (CW) output power.
GaN HEMT technology.
High power density.
High efficiency.
RoHS-compliant Advance Specification Data Sheets describe products that are being cons.

Part Number	Description
GTVA221701FA	Thermally-Enhanced High Power RF GaN HEMT
GTVA261701FA	Thermally-Enhanced High Power RF GaN HEMT