GTVA220701FA Datasheet - Infineon

Thermally-Enhanced High Power RF GaN HEMT

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Features

* Input matched

* Typical Pulsed CW performance, 2170 MHz, 48 V - Output power at P3dB = 70 W - Efficiency = 70% - Gain = 20 dB

* Capable of handling 10:1 VSWR @48 V, 70 W (CW)

GTVA220701FA

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Thermally-enhanced high power rf gan hemt.

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GTVA220701FA Thermally-Enhanced High Power GaN HEMT Infineon

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