GTVA221701FA Datasheet Thermally-Enhanced High Power RF GaN HEMT

Manufacturer: Infineon

Datasheet Details

Part number	GTVA221701FA
Manufacturer	Infineon
File Size	113.71 KB
Description	Thermally-Enhanced High Power RF GaN HEMT
Download	GTVA221701FA Download (PDF)

The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

advance specification GTVA221701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170.

input matching, high efficiency, and a thermally-enhanced package with earless flange. Features.
Input matched.
Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB.
Capable of handling 10:1 VSWR @48 V, 140 W (CW) output power.
GaN HEMT technology.
High power density.
High efficiency.
RoHS-compliant Advance Specification Data Sheets describe products that.

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