GTVA221701FA Datasheet - Infineon

Thermally-Enhanced High Power RF GaN HEMT

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Features

* Input matched

* Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB

* Capable of handling 10:1 VSWR @4

GTVA221701FA

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Thermally-enhanced high power rf gan hemt.

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GTVA221701FA Thermally-Enhanced High Power GaN HEMT Infineon

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