Infineon Technologies GTVA220701FA
The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. The target performance shown in Advance Specifications is not final and should not be used for any design activity.| Part No. | GTVA220701FA |
|---|---|
| Datasheet | GTVA220701FA Download |
| Manufacturer |  Infineon Technologies |
| Description | Thermally-Enhanced High Power RF GaN HEMT |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Input matched● Typical Pulsed CW performance, 2170 MHz, 48 V - Output power at P3dB = 70 W - Efficiency = 70% - Gain = 20 dB
● Capable of handling 10:1 VSWR @48 V, 70 W (CW) output power
● GaN HEMT technology
● High power density
● High efficiency
● RoHS-compliant Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. Please contact Infineon about the future availability of these products. GTVA220701FA Package H-37265J-2 Target RF Characteristics Single-carrier LTE Specifications (tested in Infineon test fixture) VDD = 48 V, IDQ = 200 mA, POUT = 6.3 W avg, ƒ1 = 2170 MHz, 3GPP signal, channel bandwidth = 20 MHz, peak/average = 9.6 dB @ 0.01% CCDF Characteristic Linear Gain Drain Efficiency Adjacent Channel Power Ratio Symbol Gps hD ACPR Min — — — Typ 21.3 26 –29.6 Max — — — Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions!
