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GTVA220701FA - Thermally-Enhanced High Power RF GaN HEMT

Description

The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Features

  • input matching, high efficiency, and a thermally-enhanced package with earless flange. Features.
  • Input matched.
  • Typical Pulsed CW performance, 2170 MHz, 48 V - Output power at P3dB = 70 W - Efficiency = 70% - Gain = 20 dB.
  • Capable of handling 10:1 VSWR @48 V, 70 W (CW) output power.
  • GaN HEMT technology.
  • High power density.
  • High efficiency.
  • RoHS-compliant Advance Specification Data Sheets describe products that are being cons.

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Datasheet preview – GTVA220701FA

Datasheet Details

Part number GTVA220701FA
Manufacturer Infineon
File Size 119.48 KB
Description Thermally-Enhanced High Power RF GaN HEMT
Datasheet download datasheet GTVA220701FA Datasheet
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Full PDF Text Transcription

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advance specification GTVA220701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 70 W, 50 V, 1805 – 2170 MHz Description The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
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