GTVA220701FA Description
The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
GTVA220701FA Key Features
- Input matched
- Typical Pulsed CW performance, 2170 MHz, 48 V
- Output power at P3dB = 70 W
- Efficiency = 70%
- Gain = 20 dB
- Capable of handling 10:1 VSWR @48 V, 70 W (CW) output power
- GaN HEMT technology
- High power density
- High efficiency
- RoHS-pliant