GTVA261701FA Key Features
- Input Matched
- Typical Pulsed CW performance, 2690 MHz, 48 V, single side
- Output power at P3dB = 170 W
- Efficiency = 72%
- Gain = 16 dB
- GaN HEMT technology
- High power density
- High efficiency
- RoHS-pliant
- 3.0 -2.8 18
- Part: GTVA261701FA
- Manufacturer: Infineon (official site)
- Size: 119.64 KB
Other GTVA261701FA Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Cree |
GTVA261701FA | Thermally-Enhanced High Power RF GaN on SiC HEMT |
Wolfspeed |
GTVA261701FA | Thermally-Enhanced High Power RF GaN on SiC HEMT |
GTVA261701FA Description
The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.