GTVA261701FA - Thermally-Enhanced High Power RF GaN HEMT

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Infineon

Part number	GTVA261701FA
Manufacturer	Infineon
File Size	119.64 KB
Description	Thermally-Enhanced High Power RF GaN HEMT
Datasheet	GTVA261701FA Datasheet
Additional preview pages of the GTVA261701FA datasheet.

The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

input matching, high efficiency, and a thermally-enhanced package with earless flange. Features.
Input Matched.
Typical Pulsed CW performance, 2690 MHz, 48 V, single side - Output power at P3dB = 170 W - Efficiency = 72% - Gain = 16 dB.
GaN HEMT technology.
High power density.
High efficiency.
RoHS-compliant Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introductio.

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Published: Feb 23, 2016 |