GTVA261701FA Datasheet - Infineon

Thermally-Enhanced High Power RF GaN HEMT

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Features

* Input Matched

* Typical Pulsed CW performance, 2690 MHz, 48 V, single side - Output power at P3dB = 170 W - Efficiency = 72% - Gain = 16 dB

* GaN HEMT technology

* H

GTVA261701FA

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Thermally-enhanced high power rf gan hemt.

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GTVA261701FA Thermally-Enhanced High Power GaN HEMT Infineon

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