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Infineon Technologies Electronic Components Datasheet

IAUC120N04S6N009 Datasheet

Power-Transistor

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IAUC120N04S6N009
OptiMOS- 6 Power-Transistor
Product Summary
Features
• OptiMOS™ - power MOSFET for automotive applications
VDS
RDS(on),max
ID
40 V
0.9 m
120 A
PG-TDSON-8
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
1
1
• 100% Avalanche tested
Type
IAUC120N04S6N009
Package
PG-TDSON-8
Marking
6N04N009
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current1)
Symbol
Conditions
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=60A, R G,min=25
I AS R G,min=25
V GS
-
P tot T C=25°C
T j, T stg -
Value
120
120
480
400
60
±20
150
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2018-09-27


Infineon Technologies Electronic Components Datasheet

IAUC120N04S6N009 Datasheet

Power-Transistor

No Preview Available !

IAUC120N04S6N009
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
-
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 1.0 K/W
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance2)
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=90µA
I DSS
V DS=40V, V GS=0V,
T j=25°C
V DS=40V, V GS=0V,
T j=125°C2)
I GSS
R DS(on)
V GS=20V, V DS=0V
V GS=7V, I D=60A
V GS=10V, I D=60A
RG
40 -
-V
2.2 2.8 3.4
- - 1 µA
- - 100
- - 100 nA
- 0.95 1.1 m
-
0.75
0.9
- 0.9 -
Rev. 1.0
page 2
2018-09-27


Part Number IAUC120N04S6N009
Description Power-Transistor
Maker Infineon
Total Page 9 Pages
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