IAUC60N04S6N050H Datasheet - Infineon

Power Transistor

* OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 5.0 mW 60 A PG-TDSON-8-57

* Half-Bridge - N-channel - Enhancement mode - Normal Level

* AEC Q101 qualified

* MSL1 up to 260°C peak reflow

* 175°C operating temperature

IAUC60N04S6N050H

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Power transistor.

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IAUC60N04S6N050H Power Transistor Infineon

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