IDDD06G65C6 Datasheet 650V SiC Schottky Diode

Manufacturer: Infineon

IDDD06G65C6 650v sic schottky diode by Infineon - Datasheet Preview

Datasheet Details

Part number	IDDD06G65C6
Manufacturer	Infineon
File Size	599.17 KB
Description	650V SiC Schottky Diode
Datasheet	IDDD06G65C6 Datasheet

Overview

IDDD06G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation G is the leading edge technology from Infineon for the SiC Schottky barrier diodes.

The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system.

The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF .

Key Features

Best in class forward voltage (1.25 V).
Best in class figure of merit (Qc x VF).
High dv/dt ruggedness (150 V/ns) Benefits.
System efficiency improvement.
System cost and size savings due to the reduced cooling requirements.
Enabling higher frequency and increased power density Potential.

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