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IDH10G65C6 - SiC Schottky Diode

Key Features

  • Best in class forward voltage (1.25 V).
  • Best in class figure of merit (Qc x VF).
  • High dv/dt ruggedness (150 V/ns) Benefits.
  • System efficiency improvement.
  • System cost and size savings due to the reduced cooling requirements.
  • Enabling higher frequency and increased power density Potential.

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Full PDF Text Transcription (Reference)

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IDH10G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). The CoolSiC™ Schottky diode 650 V G6 has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range. Table 1 Key performance parameters Parameter Value Unit VRRM 650 V QC (VR = 400 V) 14.7 nC EC (VR = 400 V) 2.