Datasheet Details
| Part number | IDW32G65C5B |
|---|---|
| Manufacturer | Infineon |
| File Size | 723.57 KB |
| Description | Silicon Carbide Diode |
| Download | IDW32G65C5B Download (PDF) |
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| Part number | IDW32G65C5B |
|---|---|
| Manufacturer | Infineon |
| File Size | 723.57 KB |
| Description | Silicon Carbide Diode |
| Download | IDW32G65C5B Download (PDF) |
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ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW32G65C5B Final Datasheet Rev.
2.0, 2015-04-13 Power Management & Multimarket 5th Generation thinQ!
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|---|---|
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| IDW30C65D2 | Diode |
| IDW30E60 | Fast Switching Emitter Controlled Diode |
| IDW30E65D1 | Rapid Switching Emitter Controlled Diode |
| IDW30G120C5B | Silicon Carbide Schottky Diode |
| IDW10G120C5B | Silicon Carbide Schottky Diode |
| IDW15E65D2 | Diode |
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| IDW20C65D2 | Diode |
| IDW20G120C5B | Silicon Carbide Schottky Diode |