IDW30E65D1 - Rapid Switching Emitter Controlled Diode

Infineon

Key Features

650 V Emitter Controlled technology.
Temperature stable behaviour of key parameters.
Low forward voltage (VF).
Ultra fast recovery.
Low reverse recovery charge (Qrr).
Low reverse recovery current (Irrm).
Softness factor >1.
175 °C junction operating temperature.
Pb-free lead plating; RoHS compliant.

IDW30E65D1 rapid switching emitter controlled diode by Infineon - Datasheet Preview

Datasheet Details

Part number	IDW30E65D1
Manufacturer	Infineon
File Size	1.60 MB
Description	Rapid Switching Emitter Controlled Diode
Datasheet	IDW30E65D1 Datasheet

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Full PDF Text Transcription (Reference)

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Diode RapidSwitchingEmitterControlledDiode IDW30E65D1 EmitterControlledDiodeRapid1Series Datasheet IndustrialPowerControl IDW30E65D1 EmitterControlledDiodeRapid1Series RapidSwitchingEmitterControlledDiode Features: •650VEmitterControlledtechnology •Temperaturestablebehaviourofkeyparameters •Lowforwardvoltage(VF) •Ultrafastrecovery •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •Softnessfactor>1 •175°Cjunctionoperatingtemperature •Pb-freeleadplating;RoHScompliant Applications: •AC/DCconverters •BoostdiodeinPFCstages •Freewheelingdiodesininvertersandmotordrives •Generalpurposeinverters •Switchmodepowersupplies Packagepindefinition: •Pin1-notconnected •Pin2andbackside-cathode