Datasheet4U.com

IDW30E65D1 - Rapid Switching Emitter Controlled Diode

Product Overview

Infineon

📥 Download Datasheet

IDW30E65D1 Rapid Switching Emitter Controlled Diode by Infineon - Datasheet Preview — Datasheet preview – IDW30E65D1

Datasheet Details

Part number	IDW30E65D1
Manufacturer	Infineon
File Size	1.60 MB
Description	Rapid Switching Emitter Controlled Diode
Datasheet	IDW30E65D1 Datasheet
Additional preview pages of the IDW30E65D1 datasheet.

Product details

Features

650 V Emitter Controlled technology.
Temperature stable behaviour of key parameters.
Low forward voltage (VF).
Ultra fast recovery.
Low reverse recovery charge (Qrr).
Low reverse recovery current (Irrm).
Softness factor >1.
175 °C junction operating temperature.
Pb-free lead plating; RoHS compliant.

📁 Similar Datasheet

IDW30G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
IDW100E60 - Fast Switching Emitter Controlled Diode (Infineon Technologies)
IDW10G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
IDW12G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
IDW16G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
IDW20G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
IDW40E65D1 - Diode (Infineon Technologies)
IDW40G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)

Other Datasheets by Infineon

IDW30E60 - Fast Switching Emitter Controlled Diode
IDW30C65D1 - Diode
IDW30C65D2 - Diode
IDW30G120C5B - Silicon Carbide Schottky Diode
IDW32G65C5B - Silicon Carbide Diode
IDW10G120C5B - Silicon Carbide Schottky Diode

Published: Nov 21, 2016 |