Datasheet4U Logo Datasheet4U.com

IDW30G120C5B - Silicon Carbide Schottky Diode

General Description

.

2 Table of Contents3 Maximum ratings4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics diagram 6 Package Drawings 9 Revision History 10 Disclaimer….

Rev.

Key Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • No reverse recovery current / No forward recovery.
  • Temperature independent switching behavior.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Excellent thermal performance.
  • Extended surge current capability.
  • Specified dv/dt ruggedness.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Carbide Schottky Diode IDW30G120C5B 5th Generation CoolSiCâ„¢ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.