Datasheet4U Logo Datasheet4U.com

IDW32G65C5B - Silicon Carbide Diode

General Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

Key Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Benchmark switching behavior.
  • No reverse recovery/ No forward recovery.
  • Temperature independent switching behavior.
  • High surge current capability.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IDW30G65C5 SiC Schottky Barrier diodes Infineon Technologies
IDW100E60 Fast Switching Emitter Controlled Diode Infineon Technologies
IDW10G65C5 SiC Schottky Barrier diodes Infineon Technologies
IDW12G65C5 SiC Schottky Barrier diodes Infineon Technologies
IDW16G65C5 SiC Schottky Barrier diodes Infineon Technologies

Other Datasheets by Infineon

Part Number Description
IDW30C65D1 Diode
IDW30C65D2 Diode
IDW30E60 Fast Switching Emitter Controlled Diode
IDW30E65D1 Rapid Switching Emitter Controlled Diode
IDW30G120C5B Silicon Carbide Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW32G65C5B Final Datasheet Rev. 2.0, 2015-04-13 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode IDW32G65C5B 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.