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IDWD20E65E7 - The Soft 650 V Emitter Controlled Si Diode

Description

Pin definition: Pin 1 and backside - Cathode Pin 2 - Anode 1 2 1 CASE 2 Type IDWD20E65E7 Package PG-TO247-2-STD-NA8.8 Marking E20EE7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-11-06

Features

  • VRRM = 650 V.
  • IF = 20 A.
  • Low and temperature stable forward voltage (VF).
  • Very soft and fast recovery.
  • Low reverse recovery current (Irrm).
  • Humidity robust design.
  • Cosmic ray ruggedness.
  • Maximum junction temperature Tvjmax = 175°C.
  • Qualified according to JEDEC for target.

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Datasheet Details

Part number IDWD20E65E7
Manufacturer Infineon
File Size 1.28 MB
Description The Soft 650 V Emitter Controlled Si Diode
Datasheet download datasheet IDWD20E65E7 Datasheet

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Full PDF Text Transcription

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IDWD20E65E7 The Soft 650 V Emitter Controlled Si Diode 7 offers improved reliability Final datasheet The Soft 650 V Emitter Controlled Si Diode 7 offers improved reliability for both Industrial and Home Appliance applications Features • VRRM = 650 V • IF = 20 A • Low and temperature stable forward voltage (VF) • Very soft and fast recovery • Low reverse recovery current (Irrm) • Humidity robust design • Cosmic ray ruggedness • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.
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