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IFX007T Datasheet

Manufacturer: Infineon
IFX007T datasheet preview

IFX007T Details

Part number IFX007T
Datasheet IFX007T-Infineon.pdf
File Size 1.35 MB
Manufacturer Infineon
Description High Current PN Half Bridge
IFX007T page 2 IFX007T page 3

IFX007T Overview

The IFX007T is an integrated high current half bridge for motor drive applications. It is part of the Industrial & Multi Purpose NovalithIC™ family containing one p-channel high-side MOSFET and one n-channel low-side MOSFET with an integrated driver IC in one package. Due to the p-channel high-side switch the need for a charge pump is eliminated thus minimizing EMI.

IFX007T Key Features

  • Path resistance of max. 12.8 mΩ @ 25°C (typ. 10.0 mΩ @ 25°C)
  • Enhanced switching speed for reduced switching losses
  • Capable for high PWM frequency bined with active freewheeling
  • Switched mode current limitation for reduced power dissipation in overcurrent
  • Current limitation level of 55 A min
  • Status flag diagnosis with current sense capability
  • Overtemperature shutdown with latch behavior
  • Undervoltage shutdown
  • Driver circuit with logic level inputs
  • Adjustable slew rates for optimized EMI

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