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IGC100T65T8RM IGBT

IGC100T65T8RM Description

IGC100T65T8RM IGBT3 Chip Medium Power .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Vers.

IGC100T65T8RM Features

* 650V Trench & Field Stop technology
* high short circuit capability, self limiting short circuit current
* positive temperature coefficient
* easy paralleling

IGC100T65T8RM Applications

* Recommended for:
* power modules Applications:
* drives Chip Type IGC100T65T8RM VCE 650V ICn 200A Die Size 9.73 x 10.23 mm2 C G E Package sawn on foil Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per

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