IGC100T65T8RM Datasheet - Infineon

IGBT

IGC100T65T8RM Features

* 650V Trench & Field Stop technology

* high short circuit capability, self limiting short circuit current

* positive temperature coefficient

* easy paralleling

* Qualified according to JEDEC for target applications Recommended for:

* power modules Applications:

* drive

IGC100T65T8RM General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG A.

IGC100T65T8RM Datasheet (190.86 KB)