IGC109T120T6RL - IGBT

Infineon

General Description

Attention please!

Key Features

1200V Trench + Field stop technology.
low switching losses.
positive temperature coefficient.
easy paralleling This chip is used for:.
low / medium power modules.

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IGC109T120T6RL igbt by Infineon - Datasheet Preview

Datasheet Details

Part number	IGC109T120T6RL
Manufacturer	Infineon
File Size	65.84 KB
Description	IGBT
Datasheet	IGC109T120T6RL Datasheet

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Full PDF Text Transcription (Reference)

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IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type VCE ICn Die Size IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 7.48 x 14.61 4 x (2.761 x 6.458) 0.811 x 1.31 mm 2 109.3 / 82.