Datasheet4U Logo Datasheet4U.com

IGC109T120T6RL - IGBT

IGC109T120T6RL Description

IGC109T120T6RL IGBT4 Low Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pr.

IGC109T120T6RL Features

* 1200V Trench + Field stop technology
* low switching losses
* positive temperature coefficient
* easy paralleling This chip is used for:

IGC109T120T6RL Applications

* low / medium power drives C G E Chip Type VCE ICn Die Size IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per

📥 Download Datasheet

Preview of IGC109T120T6RL PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

IGBT Infineon
Infineon IGC109T120T6RL-like datasheet