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IGC28T65QE - IGBT

General Description

Recommended for discrete components and modules Type IGC28T65QE Die size 6.57 mm x 4.2 mm Delivery form Sawn on foil Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-28 IGC28T65QE High Speed IGBT3

Key Features

  • VCES = 650 V.
  • ICn = 50 A.
  • 650 V trench & field stop technology.
  • Low VCEsat.
  • Low EMI.
  • Low turn-off losses.
  • Positive temperature coefficient Potential.

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IGC28T65QE High Speed IGBT3 Chip Features • VCES = 650 V • ICn = 50 A • 650 V trench & field stop technology • Low VCEsat • Low EMI • Low turn-off losses • Positive temperature coefficient Potential applications • Uninterruptible power supplies • Welding converters • Converters with high switching frequency Product validation • Technology qualified for industrial applications. Ready for validation in industrial applications according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22 Description • Recommended for discrete components and modules Type IGC28T65QE Die size 6.57 mm x 4.2 mm Delivery form Sawn on foil Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.