IGC99T120T6RM - IGBT

Infineon

General Description

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Key Features

1200V Trench + Field Stop technology.
low switching losses.
soft turn off.
positive temperature coefficient.
easy paralleling This chip is used for:.
medium power modules.

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IGC99T120T6RM igbt by Infineon - Datasheet Preview

Datasheet Details

Part number	IGC99T120T6RM
Manufacturer	Infineon
File Size	70.57 KB
Description	IGBT
Datasheet	IGC99T120T6RM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGC99T120T6RM IGBT4 Medium Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium power modules Applications: • medium power drives C G E Chip Type VCE ICn Die Size IGC99T120T6RM 1200V 100A 10.39 x 9.5 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 10.39 x 9.5 7.987 x 8.923 1.31 x 0.811 mm 2 98.7 / 76.