IGLT65R055D2 Datasheet | Infineon

Features - Enhancement mode transistor ‑ Normally OFF switch - Ultra fast switching - No reverse‑recovery charge - Capable of reverse conduction - Low gate charge, low output charge - Superior mutation ruggedness - ESD (HBM/CDM) JEDEC standards Benefits - Improves system efficiency - Improves power density - Enables highest operating frequency - System cost reduction savings - Reduces EMI Potential applications ​Industrial, tele, datacenter SMPS, charger and adapter based on half‑bridge topologies (half‑bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). Product validation Fully qualified according to JEDEC for Industrial Applications Please note: Target Datasheet to change without further notice Table 1 Key Performance Parameters Parameter Value Unit VDS,max RDS(on),max 66 mΩ Qg,typ 6.6 n C ID,pulse Qoss @ 400 V 36 n C Qrr 0 n C TOLT 1 8 Drain Pin 1-8 Gate Pin...