IGT60R190D1 Datasheet | Infineon

Features - Enhancement mode transistor - Normally OFF switch - Ultra fast switching - No reverse-recovery charge - Capable of reverse conduction - Low gate charge, low output charge - Superior mutation ruggedness - Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) SK G G SK Benefits - Improves system efficiency - Improves power density - Enables higher operating frequency - System cost reduction savings - Reduces EMI Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications Industrial, tele, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). For other applications: review Cool Ga N™ reliability white paper and contact Infineon regional support Table 1 Parameter VDS,max RDS(on),max QG,typ ID,pulse Qoss @ 400 V Qrr Key Performance Parameters at Tj = 25 °C Value Unit 190 mΩ 3.2 n C 16 n C 0 n C Table 2 Ordering Information Type / Ordering Code Package PG-HSOF-8-3...