IKW50N65EH5 Overview
Description
Package pin definition: - Pin G - gate - Pin C & backside - collector - Pin E - emitter C Type IKW50N65EH5 G E Package PG-TO247-3 Marking K50EEH5 Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-11-09 IKW50N65EH5 High speed 5 IGBT in TRENCHSTOP™ 5 technology Description.
Key Features
- Best-in-class efficiency in hard switching and resonant topologies
- Plug and play replacement of previous generation IGBTs
- 650 V breakdown voltage
- Low gate charge QG
- IGBT co-packed with full-rated RAPID 1 fast and soft antiparallel diode
- Maximum junction temperature Tvjmax = 175°C
- Qualified according to JEDEC for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models: Potential applications
- Uninterruptible power supplies
