IKW50N65EH5 Overview
Pin G - gate Pin C & backside - collector Pin E - emitter C Type IKW50N65EH5 G E Package PG-TO247-3 Marking K50EEH5 Datasheet .infineon. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-11-09 IKW50N65EH5 High speed 5 IGBT in TRENCHSTOP™ 5 technology Table of contents Table of contents Description.
IKW50N65EH5 Key Features
- VCE = 650 V
- IC = 50 A
- Best-in-class efficiency in hard switching and resonant topologies
- Plug and play replacement of previous generation IGBTs
- 650 V breakdown voltage
- Low gate charge QG
- IGBT co-packed with full-rated RAPID 1 fast and soft antiparallel diode
- Maximum junction temperature Tvjmax = 175°C
- Qualified according to JEDEC for target