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IKW50N65F5 Datasheet IGBT

Manufacturer: Infineon

General Description

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Overview

IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKW50N65F5 650VDuoPackIGBTandDiode.

Key Features

  • C High speed F5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • 650V breakdown voltage.
  • Low Qg.
  • IGBT copacked with RAPID 1 fast and soft antiparallel diode.
  • Maximum junction temperature 175°C.
  • Qualified according to JEDEC for target.